Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

E. S. Choi; W. C. Shin; T. S. Suh; S. S. Park; S. G. Yoon

doi:10.1080/10584580008215662

Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

E. S. Choi
, W. C. Shin
, T. S. Suh
, S. S. Park
, S. G. Yoon

Chungnam National University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO₃(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10^-5 Ω̇cm². The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

Original language	English
Pages (from-to)	297-304
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	31
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008215662
State	Published - 2000
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000

Keywords

MOCVD
Pt/Ru/poly-Si electrode structure
Specific contact resistance
Step coverage

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10.1080/10584580008215662

Cite this

@article{b848ed9d3d1f46cabd9560f5700e97ea,

title = "Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor",

abstract = "The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 {\.Ω}cm2. The step coverage of Ru film deposited at 150°C was 76\% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3\%.",

keywords = "MOCVD, Pt/Ru/poly-Si electrode structure, Specific contact resistance, Step coverage",

author = "Choi, \{E. S.\} and Shin, \{W. C.\} and Suh, \{T. S.\} and Park, \{S. S.\} and Yoon, \{S. G.\}",

year = "2000",

doi = "10.1080/10584580008215662",

language = "English",

volume = "31",

pages = "297--304",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

AU - Choi, E. S.

AU - Shin, W. C.

AU - Suh, T. S.

AU - Park, S. S.

AU - Yoon, S. G.

PY - 2000

Y1 - 2000

N2 - The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 Ω̇cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

AB - The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 Ω̇cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

KW - MOCVD

KW - Pt/Ru/poly-Si electrode structure

KW - Specific contact resistance

KW - Step coverage

UR - https://www.scopus.com/pages/publications/0034447444

U2 - 10.1080/10584580008215662

DO - 10.1080/10584580008215662

M3 - Conference article

AN - SCOPUS:0034447444

SN - 1058-4587

VL - 31

SP - 297

EP - 304

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

Abstract

Keywords

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