Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

Min Seok Kim, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin Hyuk Bae, Sin Hyung Lee, In Man Kang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

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