Carbon nanotube thin film transistors on flexible substrates

Bhupesh Chandra; Hongsik Park; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski

doi:10.1063/1.3622767

Carbon nanotube thin film transistors on flexible substrates

Bhupesh Chandra, Hongsik Park, Ahmed Maarouf, Glenn J. Martyna, George S. Tulevski

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼10⁵) with mobility values ranging from 10-35 cm²/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

Original language	English
Article number	072110
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3622767
State	Published - 15 Aug 2011

Access to Document

10.1063/1.3622767

Cite this

@article{3c47eb1e6a5d4a2da3f59c2f4c925120,

title = "Carbon nanotube thin film transistors on flexible substrates",

abstract = "Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.",

author = "Bhupesh Chandra and Hongsik Park and Ahmed Maarouf and Martyna, {Glenn J.} and Tulevski, {George S.}",

year = "2011",

month = aug,

day = "15",

doi = "10.1063/1.3622767",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Carbon nanotube thin film transistors on flexible substrates

AU - Chandra, Bhupesh

AU - Park, Hongsik

AU - Maarouf, Ahmed

AU - Martyna, Glenn J.

AU - Tulevski, George S.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

AB - Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

UR - http://www.scopus.com/inward/record.url?scp=80052081629&partnerID=8YFLogxK

U2 - 10.1063/1.3622767

DO - 10.1063/1.3622767

M3 - Article

AN - SCOPUS:80052081629

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072110

ER -

Carbon nanotube thin film transistors on flexible substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this