Carbon nanotube thin film transistors on flexible substrates

Bhupesh Chandra; Hongsik Park; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski

doi:10.1063/1.3622767

Carbon nanotube thin film transistors on flexible substrates

Bhupesh Chandra
, Hongsik Park
, Ahmed Maarouf
, Glenn J. Martyna
, George S. Tulevski

School of Electronics Engineering

IBM
Egypt Nanotechnology Research Center

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼10⁵) with mobility values ranging from 10-35 cm²/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

Original language	English
Article number	072110
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3622767
State	Published - 15 Aug 2011

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title = "Carbon nanotube thin film transistors on flexible substrates",

abstract = "Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95\% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.",

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AU - Park, Hongsik

AU - Maarouf, Ahmed

AU - Martyna, Glenn J.

AU - Tulevski, George S.

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Y1 - 2011/8/15

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AB - Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

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JO - Applied Physics Letters

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Carbon nanotube thin film transistors on flexible substrates

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