Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO

K. Ip; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; F. Ren

doi:10.1063/1.1644318

Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO

K. Ip, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, F. Ren

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Abstract

The carrier concentration dependence of contact resistance for Ti/Al/Pt/Au ohmic contacts was studied on n-type ZnO thin films. The specific contact resistance in the range of 10^-7 to 10^-8 ωcm ^-2 was obtained. The dominant transport mechanisms were tunneling in the contacts in the most highly doped films and thermionic emission in the more lightly doped films. The results shows significant changes in morphology of contacts even for low-temperature anneals.

Original language	English
Pages (from-to)	544-546
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1644318
State	Published - 26 Jan 2004

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abstract = "The carrier concentration dependence of contact resistance for Ti/Al/Pt/Au ohmic contacts was studied on n-type ZnO thin films. The specific contact resistance in the range of 10-7 to 10-8 ωcm -2 was obtained. The dominant transport mechanisms were tunneling in the contacts in the most highly doped films and thermionic emission in the more lightly doped films. The results shows significant changes in morphology of contacts even for low-temperature anneals.",

author = "K. Ip and Heo, {Y. W.} and Baik, {K. H.} and Norton, {D. P.} and Pearton, {S. J.} and F. Ren",

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AU - Ip, K.

AU - Heo, Y. W.

AU - Baik, K. H.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2004/1/26

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N2 - The carrier concentration dependence of contact resistance for Ti/Al/Pt/Au ohmic contacts was studied on n-type ZnO thin films. The specific contact resistance in the range of 10-7 to 10-8 ωcm -2 was obtained. The dominant transport mechanisms were tunneling in the contacts in the most highly doped films and thermionic emission in the more lightly doped films. The results shows significant changes in morphology of contacts even for low-temperature anneals.

AB - The carrier concentration dependence of contact resistance for Ti/Al/Pt/Au ohmic contacts was studied on n-type ZnO thin films. The specific contact resistance in the range of 10-7 to 10-8 ωcm -2 was obtained. The dominant transport mechanisms were tunneling in the contacts in the most highly doped films and thermionic emission in the more lightly doped films. The results shows significant changes in morphology of contacts even for low-temperature anneals.

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Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO

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