Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN

Gregory A. Garrett; Paul Rotella; Hongen Shen; Michael Wraback; Daniel A. Haeger; Roy B. Chung; Nathan Pfaff; Erin C. Young; Steven P. Denbaars; James S. Speck; Daniel A. Cohen

doi:10.1002/pssb.201100528

Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN

Gregory A. Garrett, Paul Rotella, Hongen Shen, Michael Wraback, Daniel A. Haeger, Roy B. Chung, Nathan Pfaff, Erin C. Young, Steven P. Denbaars, James S. Speck, Daniel A. Cohen

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1 Scopus citations

Abstract

Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar (202̄1) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono-exponential decays of around 500ps and calculated radiative and non-radiative lifetimes are compared to previously reported results for active regions on bulk m-plane GaN.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	Physica Status Solidi (B): Basic Research
Volume	249
Issue number	3
DOIs	https://doi.org/10.1002/pssb.201100528
State	Published - Mar 2012

Keywords

Semipolar AlGaN
Time-resolved photoluminescence
Ultraviolet laser diodes

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10.1002/pssb.201100528

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Garrett, G. A., Rotella, P., Shen, H., Wraback, M., Haeger, D. A., Chung, R. B., Pfaff, N., Young, E. C., Denbaars, S. P., Speck, J. S., & Cohen, D. A. (2012). Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN. Physica Status Solidi (B): Basic Research, 249(3), 507-510. https://doi.org/10.1002/pssb.201100528

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title = "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN",

abstract = "Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar (20{\=2}1) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono-exponential decays of around 500ps and calculated radiative and non-radiative lifetimes are compared to previously reported results for active regions on bulk m-plane GaN.",

keywords = "Semipolar AlGaN, Time-resolved photoluminescence, Ultraviolet laser diodes",

author = "Garrett, {Gregory A.} and Paul Rotella and Hongen Shen and Michael Wraback and Haeger, {Daniel A.} and Chung, {Roy B.} and Nathan Pfaff and Young, {Erin C.} and Denbaars, {Steven P.} and Speck, {James S.} and Cohen, {Daniel A.}",

year = "2012",

month = mar,

doi = "10.1002/pssb.201100528",

language = "English",

volume = "249",

pages = "507--510",

journal = "Physica Status Solidi (B): Basic Research",

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T1 - Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN

AU - Garrett, Gregory A.

AU - Rotella, Paul

AU - Shen, Hongen

AU - Wraback, Michael

AU - Haeger, Daniel A.

AU - Chung, Roy B.

AU - Pfaff, Nathan

AU - Young, Erin C.

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Cohen, Daniel A.

PY - 2012/3

Y1 - 2012/3

N2 - Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar (202̄1) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono-exponential decays of around 500ps and calculated radiative and non-radiative lifetimes are compared to previously reported results for active regions on bulk m-plane GaN.

AB - Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar (202̄1) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono-exponential decays of around 500ps and calculated radiative and non-radiative lifetimes are compared to previously reported results for active regions on bulk m-plane GaN.

KW - Semipolar AlGaN

KW - Time-resolved photoluminescence

KW - Ultraviolet laser diodes

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DO - 10.1002/pssb.201100528

M3 - Article

AN - SCOPUS:84857383272

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VL - 249

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EP - 510

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 3

ER -

Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN

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