Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

Sunghwan Lee; Yang Song; Hongsik Park; A. Zaslavsky; D. C. Paine

doi:10.1016/j.sse.2017.06.033

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

Sunghwan Lee, Yang Song, Hongsik Park, A. Zaslavsky, D. C. Paine

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μ_FE with channel length L (from 39.3 to 9.9 cm²/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μ_FE underestimation due to contact resistance (R_C) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μ_FE when the TFT performance is significantly affected by R_C. The corrected μ_FE values are higher (45.4 cm²/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μ_FE measurements and suggest strategies to determine accurate μ_FE when a TFT channel is scaled.

Original language	English
Pages (from-to)	94-99
Number of pages	6
Journal	Solid-State Electronics
Volume	135
DOIs	https://doi.org/10.1016/j.sse.2017.06.033
State	Published - Sep 2017

Keywords

Amorphous oxides
Channel scaling
Field-effect mobility
InZnO (IZO)
Thin film transistor (TFT)

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10.1016/j.sse.2017.06.033

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title = "Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors",

abstract = "Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.",

keywords = "Amorphous oxides, Channel scaling, Field-effect mobility, InZnO (IZO), Thin film transistor (TFT)",

author = "Sunghwan Lee and Yang Song and Hongsik Park and A. Zaslavsky and Paine, {D. C.}",

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T1 - Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

AU - Lee, Sunghwan

AU - Song, Yang

AU - Park, Hongsik

AU - Zaslavsky, A.

AU - Paine, D. C.

PY - 2017/9

Y1 - 2017/9

N2 - Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

AB - Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

KW - Amorphous oxides

KW - Channel scaling

KW - Field-effect mobility

KW - InZnO (IZO)

KW - Thin film transistor (TFT)

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SN - 0038-1101

VL - 135

SP - 94

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JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

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Keywords

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