Characterisation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film prepared by Langmuir-Blodgett deposition

Woo Young Kim; Dong Seok Song; Gwang Jae Jeon; In Ku Kang; Hyun Bin Shim; Do Kyung Kim; Hee Chul Lee; Hongsik Park; Shin Won Kang; Jin Hyuk Bae

doi:10.1049/mnl.2015.0038

Characterisation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film prepared by Langmuir-Blodgett deposition

Woo Young Kim, Dong Seok Song, Gwang Jae Jeon, In Ku Kang, Hyun Bin Shim, Do Kyung Kim, Hee Chul Lee, Hongsik Park, Shin Won Kang, Jin Hyuk Bae

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ferroelectric polymer is a flexible memory material that is insensitive to environmental variations and lends itself to research in emerging optoelectronic applications. Using Langmuir-Blodgett (LB) deposition technology, the thickness of a ferroelectric film can be controlled in the nanometre range, offering a pathway to molecular electronics. In this reported work, ultrathin ferroelectric polymer films were fabricated through LB deposition technology and characterised by observing the surface morphology, crystallinity and polarisation-voltage relationships. Unlike previously reported ferroelectric LB films, this work has shown a maximum remanent polarisation (PR) of 6 μC/cm² at 35 nm, which is compatible with the thick film prepared by the spin-coating method. In addition, the polarisation stability in terms of depolarisation was investigated, which showed that the engineering of the interface between the ferroelectric LB film and the substrate is an important, deterministic factor for reliable memory applications with high signal-to-noise ratios.

Original language	English
Pages (from-to)	384-388
Number of pages	5
Journal	Micro and Nano Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1049/mnl.2015.0038
State	Published - 1 Aug 2015

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title = "Characterisation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film prepared by Langmuir-Blodgett deposition",

abstract = "Ferroelectric polymer is a flexible memory material that is insensitive to environmental variations and lends itself to research in emerging optoelectronic applications. Using Langmuir-Blodgett (LB) deposition technology, the thickness of a ferroelectric film can be controlled in the nanometre range, offering a pathway to molecular electronics. In this reported work, ultrathin ferroelectric polymer films were fabricated through LB deposition technology and characterised by observing the surface morphology, crystallinity and polarisation-voltage relationships. Unlike previously reported ferroelectric LB films, this work has shown a maximum remanent polarisation (PR) of 6 μC/cm2 at 35 nm, which is compatible with the thick film prepared by the spin-coating method. In addition, the polarisation stability in terms of depolarisation was investigated, which showed that the engineering of the interface between the ferroelectric LB film and the substrate is an important, deterministic factor for reliable memory applications with high signal-to-noise ratios.",

author = "Kim, {Woo Young} and Song, {Dong Seok} and Jeon, {Gwang Jae} and Kang, {In Ku} and Shim, {Hyun Bin} and Kim, {Do Kyung} and Lee, {Hee Chul} and Hongsik Park and Kang, {Shin Won} and Bae, {Jin Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2015 The Institution of Engineering and Technology.",

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doi = "10.1049/mnl.2015.0038",

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AU - Kim, Woo Young

AU - Song, Dong Seok

AU - Jeon, Gwang Jae

AU - Kang, In Ku

AU - Shim, Hyun Bin

AU - Kim, Do Kyung

AU - Lee, Hee Chul

AU - Park, Hongsik

AU - Kang, Shin Won

AU - Bae, Jin Hyuk

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Ferroelectric polymer is a flexible memory material that is insensitive to environmental variations and lends itself to research in emerging optoelectronic applications. Using Langmuir-Blodgett (LB) deposition technology, the thickness of a ferroelectric film can be controlled in the nanometre range, offering a pathway to molecular electronics. In this reported work, ultrathin ferroelectric polymer films were fabricated through LB deposition technology and characterised by observing the surface morphology, crystallinity and polarisation-voltage relationships. Unlike previously reported ferroelectric LB films, this work has shown a maximum remanent polarisation (PR) of 6 μC/cm2 at 35 nm, which is compatible with the thick film prepared by the spin-coating method. In addition, the polarisation stability in terms of depolarisation was investigated, which showed that the engineering of the interface between the ferroelectric LB film and the substrate is an important, deterministic factor for reliable memory applications with high signal-to-noise ratios.

AB - Ferroelectric polymer is a flexible memory material that is insensitive to environmental variations and lends itself to research in emerging optoelectronic applications. Using Langmuir-Blodgett (LB) deposition technology, the thickness of a ferroelectric film can be controlled in the nanometre range, offering a pathway to molecular electronics. In this reported work, ultrathin ferroelectric polymer films were fabricated through LB deposition technology and characterised by observing the surface morphology, crystallinity and polarisation-voltage relationships. Unlike previously reported ferroelectric LB films, this work has shown a maximum remanent polarisation (PR) of 6 μC/cm2 at 35 nm, which is compatible with the thick film prepared by the spin-coating method. In addition, the polarisation stability in terms of depolarisation was investigated, which showed that the engineering of the interface between the ferroelectric LB film and the substrate is an important, deterministic factor for reliable memory applications with high signal-to-noise ratios.

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JO - Micro and Nano Letters

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Characterisation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film prepared by Langmuir-Blodgett deposition

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