Characteristic Analysis of SAW Filters Fabricated Using GaN Thin Films

Hwan Hee Jeong, Sun Ki Kim, Young Chul Jung, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The surface morphology and characteristic parameters were analyzed for surface acoustic wave (SAW) filters, fabricated on epitaxially grown undoped GaN thin films on sapphire substrates. GaN thin films with good surface morphology (rms = 0.21 nm) were obtained. SAW filters with unapodized interdigital transducer/GaN/sapphire structure were used to estimate the characteristic parameters. The phase velocity and temperature coefficient of frequency (TCF) were 5550-4900 m/s and -60.8 to -50.0 ppm/°C in the temperature range between -25 and 50°C at kh = 0.25-1.26, respectively. The fact that the temperature coefficient is even better at higher frequency explains that the SAW filters fabricated using GaN thin films would have a strong potential for GHz band applications.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
StatePublished - Nov 2001

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