Characteristics analysis of SAW filter using Al0.36Ga0.64 N thin film

Sun Ki Kim; Min Jung Park; Cheol Yeong Jang; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1557/proc-720-h3.1

Characteristics analysis of SAW filter using Al_0.36Ga_0.64 N thin film

Sun Ki Kim, Min Jung Park, Cheol Yeong Jang, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Al_xGa_1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the Al_xGa_1-xN sample, when kh value was 0.078, at temperatures between -30 °C and 60 °C. Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

Original language	English
Pages (from-to)	51-56
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	720
DOIs	https://doi.org/10.1557/proc-720-h3.1
State	Published - 2002
Event	Materials Issues for Tunable RF and Microwave Devices III - San Francisco, CA, United States Duration: 2 Apr 2002 → 3 Apr 2002

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@article{d0ad65fceb4a43dcb78a346af2f08d29,

title = "Characteristics analysis of SAW filter using Al0.36Ga0.64 N thin film",

abstract = "AlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between -30 °C and 60 °C. Electromechanical coupling coefficient was ranged from 1.26 \% to 2.22 \%. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.",

author = "Kim, \{Sun Ki\} and Park, \{Min Jung\} and Jang, \{Cheol Yeong\} and Choi, \{Hyun Chul\} and Lee, \{Jung Hee\} and Lee, \{Yong Hyun\}",

year = "2002",

doi = "10.1557/proc-720-h3.1",

language = "English",

volume = "720",

pages = "51--56",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials Issues for Tunable RF and Microwave Devices III ; Conference date: 02-04-2002 Through 03-04-2002",

}

TY - JOUR

T1 - Characteristics analysis of SAW filter using Al0.36Ga0.64 N thin film

AU - Kim, Sun Ki

AU - Park, Min Jung

AU - Jang, Cheol Yeong

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2002

Y1 - 2002

N2 - AlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between -30 °C and 60 °C. Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

AB - AlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between -30 °C and 60 °C. Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

UR - https://www.scopus.com/pages/publications/0036458565

U2 - 10.1557/proc-720-h3.1

DO - 10.1557/proc-720-h3.1

M3 - Conference article

AN - SCOPUS:0036458565

SN - 0272-9172

VL - 720

SP - 51

EP - 56

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Materials Issues for Tunable RF and Microwave Devices III

Y2 - 2 April 2002 through 3 April 2002

ER -

Characteristics analysis of SAW filter using Al_0.36Ga_0.64 N thin film

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