Characteristics of 0.2m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs

T. W. Kim; D. H. Kim; S. H. Shin; S. J. Jo; J. H. Jang; J. I. Song

doi:10.1049/el:20062431

Characteristics of 0.2m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs

T. W. Kim
, D. H. Kim
, S. H. Shin
, S. J. Jo
, J. H. Jang
, J. I. Song

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Characteristics of 0.2m depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum g_m, I _ON/I_OFF, sub-threshold slope, f_T, and f _max of the QE SAG capless p-HEMT were 1.22S/mm, 2.11×10 ⁵, 65mV/dec, 210GHz and 250GHz, and those of the D SAG capless p-HEMT were 1.12S/mm, 1.27×10⁴, 78mV/dec, 185GHz and 225GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46.

Original language	English
Pages (from-to)	1178-1180
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	20
DOIs	https://doi.org/10.1049/el:20062431
State	Published - 2006

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title = "Characteristics of 0.2m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs",

abstract = "Characteristics of 0.2m depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum gm, I ON/IOFF, sub-threshold slope, fT, and f max of the QE SAG capless p-HEMT were 1.22S/mm, 2.11×10 5, 65mV/dec, 210GHz and 250GHz, and those of the D SAG capless p-HEMT were 1.12S/mm, 1.27×104, 78mV/dec, 185GHz and 225GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46.",

author = "Kim, \{T. W.\} and Kim, \{D. H.\} and Shin, \{S. H.\} and Jo, \{S. J.\} and Jang, \{J. H.\} and Song, \{J. I.\}",

year = "2006",

doi = "10.1049/el:20062431",

language = "English",

volume = "42",

pages = "1178--1180",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Characteristics of 0.2m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs

AU - Kim, T. W.

AU - Kim, D. H.

AU - Shin, S. H.

AU - Jo, S. J.

AU - Jang, J. H.

AU - Song, J. I.

PY - 2006

Y1 - 2006

N2 - Characteristics of 0.2m depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum gm, I ON/IOFF, sub-threshold slope, fT, and f max of the QE SAG capless p-HEMT were 1.22S/mm, 2.11×10 5, 65mV/dec, 210GHz and 250GHz, and those of the D SAG capless p-HEMT were 1.12S/mm, 1.27×104, 78mV/dec, 185GHz and 225GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46.

AB - Characteristics of 0.2m depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum gm, I ON/IOFF, sub-threshold slope, fT, and f max of the QE SAG capless p-HEMT were 1.22S/mm, 2.11×10 5, 65mV/dec, 210GHz and 250GHz, and those of the D SAG capless p-HEMT were 1.12S/mm, 1.27×104, 78mV/dec, 185GHz and 225GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46.

UR - https://www.scopus.com/pages/publications/33749349557

U2 - 10.1049/el:20062431

DO - 10.1049/el:20062431

M3 - Article

AN - SCOPUS:33749349557

SN - 0013-5194

VL - 42

SP - 1178

EP - 1180

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Characteristics of 0.2m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs

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