Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates

Suku Kim; B. S. Kang; F. Ren; Y. W. Heo; K. Ip; D. P. Norton; S. J. Pearton

doi:10.1149/1.1738554

Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates

Suku Kim, B. S. Kang, F. Ren, Y. W. Heo, K. Ip, D. P. Norton, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Thin films of oriented, polycrystalline p-type Zn_0.9Mg _0.1O were deposited on n-type indium-tin oxide (ITO)-coated glass sub-strates by pulsed laser deposition at 400°C to form transparent wide bandgap heterojunctions. The characteristics of Au, Ni, or Pt contacts subsequently deposited on these heterojunction layers were examined. In each case, rectifying behavior of the p-n junction was obtained. The junctions display a negative temperature coefficient for reverse breakdown voltage. This approach looks promising as a means of realizing low-cost-substrate transparent electronics.

Original language	English
Pages (from-to)	G145-G147
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1149/1.1738554
State	Published - 2004

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title = "Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates",

abstract = "Thin films of oriented, polycrystalline p-type Zn0.9Mg 0.1O were deposited on n-type indium-tin oxide (ITO)-coated glass sub-strates by pulsed laser deposition at 400°C to form transparent wide bandgap heterojunctions. The characteristics of Au, Ni, or Pt contacts subsequently deposited on these heterojunction layers were examined. In each case, rectifying behavior of the p-n junction was obtained. The junctions display a negative temperature coefficient for reverse breakdown voltage. This approach looks promising as a means of realizing low-cost-substrate transparent electronics.",

author = "Suku Kim and Kang, {B. S.} and F. Ren and Heo, {Y. W.} and K. Ip and Norton, {D. P.} and Pearton, {S. J.}",

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doi = "10.1149/1.1738554",

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T1 - Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates

AU - Kim, Suku

AU - Kang, B. S.

AU - Ren, F.

AU - Heo, Y. W.

AU - Ip, K.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2004

Y1 - 2004

N2 - Thin films of oriented, polycrystalline p-type Zn0.9Mg 0.1O were deposited on n-type indium-tin oxide (ITO)-coated glass sub-strates by pulsed laser deposition at 400°C to form transparent wide bandgap heterojunctions. The characteristics of Au, Ni, or Pt contacts subsequently deposited on these heterojunction layers were examined. In each case, rectifying behavior of the p-n junction was obtained. The junctions display a negative temperature coefficient for reverse breakdown voltage. This approach looks promising as a means of realizing low-cost-substrate transparent electronics.

AB - Thin films of oriented, polycrystalline p-type Zn0.9Mg 0.1O were deposited on n-type indium-tin oxide (ITO)-coated glass sub-strates by pulsed laser deposition at 400°C to form transparent wide bandgap heterojunctions. The characteristics of Au, Ni, or Pt contacts subsequently deposited on these heterojunction layers were examined. In each case, rectifying behavior of the p-n junction was obtained. The junctions display a negative temperature coefficient for reverse breakdown voltage. This approach looks promising as a means of realizing low-cost-substrate transparent electronics.

UR - http://www.scopus.com/inward/record.url?scp=3042828446&partnerID=8YFLogxK

U2 - 10.1149/1.1738554

DO - 10.1149/1.1738554

M3 - Article

AN - SCOPUS:3042828446

SN - 1099-0062

VL - 7

SP - G145-G147

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Characteristics of thin-film p-ZnMgO/n-ITO heterojunctions on glass substrates

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