Characterization of ferroelectric SrBi2Ta2O9 thin films deposited by a radio frequency magnetron sputtering technique

Sang Shik Park; Cheol Hoon Yang; Soon Gil Yoon; Jun Hyung Ahn; Ho Gi Kim

doi:10.1149/1.1837907

Characterization of ferroelectric SrBi₂Ta₂O₉ thin films deposited by a radio frequency magnetron sputtering technique

Sang Shik Park, Cheol Hoon Yang, Soon Gil Yoon, Jun Hyung Ahn, Ho Gi Kim

Research output: Contribution to journal › Article › peer-review

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Abstract

Fatigue-free Bi-layer SrBi₂Ta₂O₉ films were deposited on Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering. The addition of 30 mole percent (m/o) SrCO₃ and 20 m/o Bi₂O₃ into the target was necessary in order to compensate for the lack of Sr and Bi in the films. A 200 nm thick Sr_0.7Bi_2.0Ta_2.0O₉ film annealed at 800°C exhibited dense morphology, a dielectric constant of 210, and a dissipation factor of 0.06 at a frequency of 1 MHz. The remnant polarization 2P_r and the coercive field 2E_c of the films were 9.1 μC/cm² and 85 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about 7 × 10^-7 A/cm² at 150 kV/cm. The films showed fatigue-free characteristics under a ±5 V bipolar square pulse of 1 MHz up to 1.0 × 10¹⁰ Hz. The SrBi₂Ta₂O₉ films prepared by radio frequency magnetron sputtering are attractive for application to nonvolatile memory devices.

Original language	English
Pages (from-to)	2855-2858
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	144
Issue number	8
DOIs	https://doi.org/10.1149/1.1837907
State	Published - Aug 1997

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@article{da974596f10642e5a464c4642b6c5a47,

title = "Characterization of ferroelectric SrBi2Ta2O9 thin films deposited by a radio frequency magnetron sputtering technique",

abstract = "Fatigue-free Bi-layer SrBi2Ta2O9 films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. The addition of 30 mole percent (m/o) SrCO3 and 20 m/o Bi2O3 into the target was necessary in order to compensate for the lack of Sr and Bi in the films. A 200 nm thick Sr0.7Bi2.0Ta2.0O9 film annealed at 800°C exhibited dense morphology, a dielectric constant of 210, and a dissipation factor of 0.06 at a frequency of 1 MHz. The remnant polarization 2Pr and the coercive field 2Ec of the films were 9.1 μC/cm2 and 85 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about 7 × 10-7 A/cm2 at 150 kV/cm. The films showed fatigue-free characteristics under a ±5 V bipolar square pulse of 1 MHz up to 1.0 × 1010 Hz. The SrBi2Ta2O9 films prepared by radio frequency magnetron sputtering are attractive for application to nonvolatile memory devices.",

author = "Park, \{Sang Shik\} and Yang, \{Cheol Hoon\} and Yoon, \{Soon Gil\} and Ahn, \{Jun Hyung\} and Kim, \{Ho Gi\}",

year = "1997",

month = aug,

doi = "10.1149/1.1837907",

language = "English",

volume = "144",

pages = "2855--2858",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

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TY - JOUR

T1 - Characterization of ferroelectric SrBi2Ta2O9 thin films deposited by a radio frequency magnetron sputtering technique

AU - Park, Sang Shik

AU - Yang, Cheol Hoon

AU - Yoon, Soon Gil

AU - Ahn, Jun Hyung

AU - Kim, Ho Gi

PY - 1997/8

Y1 - 1997/8

N2 - Fatigue-free Bi-layer SrBi2Ta2O9 films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. The addition of 30 mole percent (m/o) SrCO3 and 20 m/o Bi2O3 into the target was necessary in order to compensate for the lack of Sr and Bi in the films. A 200 nm thick Sr0.7Bi2.0Ta2.0O9 film annealed at 800°C exhibited dense morphology, a dielectric constant of 210, and a dissipation factor of 0.06 at a frequency of 1 MHz. The remnant polarization 2Pr and the coercive field 2Ec of the films were 9.1 μC/cm2 and 85 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about 7 × 10-7 A/cm2 at 150 kV/cm. The films showed fatigue-free characteristics under a ±5 V bipolar square pulse of 1 MHz up to 1.0 × 1010 Hz. The SrBi2Ta2O9 films prepared by radio frequency magnetron sputtering are attractive for application to nonvolatile memory devices.

AB - Fatigue-free Bi-layer SrBi2Ta2O9 films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. The addition of 30 mole percent (m/o) SrCO3 and 20 m/o Bi2O3 into the target was necessary in order to compensate for the lack of Sr and Bi in the films. A 200 nm thick Sr0.7Bi2.0Ta2.0O9 film annealed at 800°C exhibited dense morphology, a dielectric constant of 210, and a dissipation factor of 0.06 at a frequency of 1 MHz. The remnant polarization 2Pr and the coercive field 2Ec of the films were 9.1 μC/cm2 and 85 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about 7 × 10-7 A/cm2 at 150 kV/cm. The films showed fatigue-free characteristics under a ±5 V bipolar square pulse of 1 MHz up to 1.0 × 1010 Hz. The SrBi2Ta2O9 films prepared by radio frequency magnetron sputtering are attractive for application to nonvolatile memory devices.

UR - https://www.scopus.com/pages/publications/0031208402

U2 - 10.1149/1.1837907

DO - 10.1149/1.1837907

M3 - Article

AN - SCOPUS:0031208402

SN - 0013-4651

VL - 144

SP - 2855

EP - 2858

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Characterization of ferroelectric SrBi₂Ta₂O₉ thin films deposited by a radio frequency magnetron sputtering technique

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