Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

Jung Gyu Jung; Kisang Lee; Boyoung Lee; Ho Seong Lee

doi:10.1016/j.sse.2018.07.008

Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

Jung Gyu Jung, Kisang Lee, Boyoung Lee, Ho Seong Lee

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We determined characteristics of internal gettering of copper in the vertical direction of p-type silicon wafer. Bulk micro-defects (BMDs) caused by oxygen precipitation and the gettering efficiency of Cu along the vertical direction from the surface into the bulk were investigated for Si wafers with and without rapid thermal annealing (RTA) process. Based on scanning infrared microscopy, secondary ion mass spectrometry, and local etching results, the density of BMDs in Si wafers with RTA process was higher than that in Si wafer without RTA process. Depth profile of Cu concentration was strongly related to the BMD density profile in the vertical direction. According to the transmission electron microscopy analysis, Cu impurities were trapped at BMDs through precipitation of copper silicides. It is proposed that the RTA process can improve the internal getterig efficiency of copper in the vertical direction of p-type silicon wafer.

Original language	English
Pages (from-to)	35-42
Number of pages	8
Journal	Solid-State Electronics
Volume	148
DOIs	https://doi.org/10.1016/j.sse.2018.07.008
State	Published - Oct 2018

Keywords

Internal gettering
Local etching technique
Oxygen precipitation
RTA
SIRM
TEM

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10.1016/j.sse.2018.07.008

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title = "Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer",

abstract = "We determined characteristics of internal gettering of copper in the vertical direction of p-type silicon wafer. Bulk micro-defects (BMDs) caused by oxygen precipitation and the gettering efficiency of Cu along the vertical direction from the surface into the bulk were investigated for Si wafers with and without rapid thermal annealing (RTA) process. Based on scanning infrared microscopy, secondary ion mass spectrometry, and local etching results, the density of BMDs in Si wafers with RTA process was higher than that in Si wafer without RTA process. Depth profile of Cu concentration was strongly related to the BMD density profile in the vertical direction. According to the transmission electron microscopy analysis, Cu impurities were trapped at BMDs through precipitation of copper silicides. It is proposed that the RTA process can improve the internal getterig efficiency of copper in the vertical direction of p-type silicon wafer.",

keywords = "Internal gettering, Local etching technique, Oxygen precipitation, RTA, SIRM, TEM",

author = "Jung, {Jung Gyu} and Kisang Lee and Boyoung Lee and Lee, {Ho Seong}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

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doi = "10.1016/j.sse.2018.07.008",

language = "English",

volume = "148",

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journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

AU - Jung, Jung Gyu

AU - Lee, Kisang

AU - Lee, Boyoung

AU - Lee, Ho Seong

PY - 2018/10

Y1 - 2018/10

N2 - We determined characteristics of internal gettering of copper in the vertical direction of p-type silicon wafer. Bulk micro-defects (BMDs) caused by oxygen precipitation and the gettering efficiency of Cu along the vertical direction from the surface into the bulk were investigated for Si wafers with and without rapid thermal annealing (RTA) process. Based on scanning infrared microscopy, secondary ion mass spectrometry, and local etching results, the density of BMDs in Si wafers with RTA process was higher than that in Si wafer without RTA process. Depth profile of Cu concentration was strongly related to the BMD density profile in the vertical direction. According to the transmission electron microscopy analysis, Cu impurities were trapped at BMDs through precipitation of copper silicides. It is proposed that the RTA process can improve the internal getterig efficiency of copper in the vertical direction of p-type silicon wafer.

AB - We determined characteristics of internal gettering of copper in the vertical direction of p-type silicon wafer. Bulk micro-defects (BMDs) caused by oxygen precipitation and the gettering efficiency of Cu along the vertical direction from the surface into the bulk were investigated for Si wafers with and without rapid thermal annealing (RTA) process. Based on scanning infrared microscopy, secondary ion mass spectrometry, and local etching results, the density of BMDs in Si wafers with RTA process was higher than that in Si wafer without RTA process. Depth profile of Cu concentration was strongly related to the BMD density profile in the vertical direction. According to the transmission electron microscopy analysis, Cu impurities were trapped at BMDs through precipitation of copper silicides. It is proposed that the RTA process can improve the internal getterig efficiency of copper in the vertical direction of p-type silicon wafer.

KW - Internal gettering

KW - Local etching technique

KW - Oxygen precipitation

KW - RTA

KW - SIRM

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=85050313512&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2018.07.008

DO - 10.1016/j.sse.2018.07.008

M3 - Article

AN - SCOPUS:85050313512

SN - 0038-1101

VL - 148

SP - 35

EP - 42

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer

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Keywords

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