Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Ju Young Lee; Bo Ra Jang; Jong Hoon Lee; Hong Seung Kim; Hyung Koun Cho; Jin Young Moon; Ho Seong Lee; Won Jae Lee; Jin Wook Baek

doi:10.1016/j.tsf.2009.01.172

Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Ju Young Lee, Bo Ra Jang, Jong Hoon Lee, Hong Seung Kim, Hyung Koun Cho, Jin Young Moon, Ho Seong Lee, Won Jae Lee, Jin Wook Baek

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10^{- 2} Ωcm and highest mobility of 33.1 cm²/Vs was observed at the In content of 0.3 at.%.

Original language	English
Pages (from-to)	4086-4089
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.172
State	Published - 29 May 2009

Keywords

Heterostructure
In-doped ZnO
PLD

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title = "Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition",

abstract = "In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.",

keywords = "Heterostructure, In-doped ZnO, PLD",

author = "Lee, {Ju Young} and Jang, {Bo Ra} and Lee, {Jong Hoon} and Kim, {Hong Seung} and Cho, {Hyung Koun} and Moon, {Jin Young} and Lee, {Ho Seong} and Lee, {Won Jae} and Baek, {Jin Wook}",

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T1 - Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

AU - Lee, Ju Young

AU - Jang, Bo Ra

AU - Lee, Jong Hoon

AU - Kim, Hong Seung

AU - Cho, Hyung Koun

AU - Moon, Jin Young

AU - Lee, Ho Seong

AU - Lee, Won Jae

AU - Baek, Jin Wook

PY - 2009/5/29

Y1 - 2009/5/29

N2 - In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.

AB - In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.

KW - Heterostructure

KW - In-doped ZnO

KW - PLD

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DO - 10.1016/j.tsf.2009.01.172

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ER -

Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

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