Characterization of MgZnO films depending on the deposition power of RF sputtering system

The Dependence of the characteristics of MgZnO thin films deposited by using a RF sputtering system on the deposition power were investigated. A Mg _0.3 Zn _0.7 O target was used to deposit thin films at powers of 150 W, 200 W, 250 W, and 300 W. While the hexagonal (002) orientation in the X-ray diffractometry (XRD) patterns increases as the deposition power increases, the MgO (200) peak begins to appear and the MgZnO (002) peak sharply decreases at 300 W. X-ray photoelectron spectroscopy (XPS) measurements showed the binding energy of the Zn2 _p3 peak to be is close to that of pure ZnO, which means an the improvement in the ZnO crystallinity with increasing deposition power. However, Hall measurements show that as the crystallinity improves, the oxygen vacancies, acting as electron donors, are reduced, as are the and electron concentration and mobility and the electrical conductivity.