Abstract
TiN thin films were deposited on Si substrate using an R.F. sputter as a function of Ar / N2 ratio of 20 : 30, 10 :3 0 and 0 : 30. The average thickness of thin film was 0.7 μm, while the size of TiN nano-particles dispersed in the matrix was 5∼10 nm in diameter. The microstructure became fine as the flow rate of N2 to Ar gas increased. The hardness and elastic modulus measured by a nanoindentation method were also enhanced. It discussed the fracture pattern took placed at the TiN layer during the indentation.
Original language | English |
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Pages (from-to) | 3929-3932 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 59 |
Issue number | 29-30 |
DOIs | |
State | Published - Dec 2005 |
Keywords
- Nanoindentation
- Nanostructures
- R.F. sputtering
- TiN thin film