Characterization of Pb1-xLaxTiO3 thin films by the radio frequency magnetron sputtering technique

Sang Shik Park; Su Jin Chae; Soon Gil Yoon

doi:10.1143/jjap.37.1955

Characterization of Pb_1-xLa_xTiO₃ thin films by the radio frequency magnetron sputtering technique

Sang Shik Park, Su Jin Chae, Soon Gil Yoon

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Abstract

Microstructures and electrical properties of polycrystalline and oriented (Pb_1-xLa_x)TiO₃ (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb_0.7La_0.3)TiO₃ target having 20mol% excess PbO were investigated. The grain size of oriented films deposited on La_0.5Sr_0.5CoO₃(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/ SiO₂/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10 kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 500°C exhibited a paraelectric properties. The leakage current densities of the polycrystalline and the oriented PLT films were about 8.0 × 10^-8 and 2.5 × 10^-7 A/cm² at 10kV/cm, respectively.

Original language	English
Pages (from-to)	1955-1959
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	4 SUPPL. A
DOIs	https://doi.org/10.1143/jjap.37.1955
State	Published - Apr 1998

Keywords

LSCO buffer layer
Oriented growth
PLT
Polycrystalline
rf sputtering

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@article{3c3f320910b4458b93f5a88bc8817c26,

title = "Characterization of Pb1-xLaxTiO3 thin films by the radio frequency magnetron sputtering technique",

abstract = "Microstructures and electrical properties of polycrystalline and oriented (Pb1-xLax)TiO3 (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb0.7La0.3)TiO3 target having 20mol% excess PbO were investigated. The grain size of oriented films deposited on La0.5Sr0.5CoO3(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/ SiO2/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10 kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 500°C exhibited a paraelectric properties. The leakage current densities of the polycrystalline and the oriented PLT films were about 8.0 × 10-8 and 2.5 × 10-7 A/cm2 at 10kV/cm, respectively.",

keywords = "LSCO buffer layer, Oriented growth, PLT, Polycrystalline, rf sputtering",

author = "Park, {Sang Shik} and Chae, {Su Jin} and Yoon, {Soon Gil}",

year = "1998",

month = apr,

doi = "10.1143/jjap.37.1955",

language = "English",

volume = "37",

pages = "1955--1959",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 SUPPL. A",

}

TY - JOUR

T1 - Characterization of Pb1-xLaxTiO3 thin films by the radio frequency magnetron sputtering technique

AU - Park, Sang Shik

AU - Chae, Su Jin

AU - Yoon, Soon Gil

PY - 1998/4

Y1 - 1998/4

N2 - Microstructures and electrical properties of polycrystalline and oriented (Pb1-xLax)TiO3 (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb0.7La0.3)TiO3 target having 20mol% excess PbO were investigated. The grain size of oriented films deposited on La0.5Sr0.5CoO3(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/ SiO2/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10 kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 500°C exhibited a paraelectric properties. The leakage current densities of the polycrystalline and the oriented PLT films were about 8.0 × 10-8 and 2.5 × 10-7 A/cm2 at 10kV/cm, respectively.

AB - Microstructures and electrical properties of polycrystalline and oriented (Pb1-xLax)TiO3 (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb0.7La0.3)TiO3 target having 20mol% excess PbO were investigated. The grain size of oriented films deposited on La0.5Sr0.5CoO3(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/ SiO2/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10 kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 500°C exhibited a paraelectric properties. The leakage current densities of the polycrystalline and the oriented PLT films were about 8.0 × 10-8 and 2.5 × 10-7 A/cm2 at 10kV/cm, respectively.

KW - LSCO buffer layer

KW - Oriented growth

KW - PLT

KW - Polycrystalline

KW - rf sputtering

UR - http://www.scopus.com/inward/record.url?scp=0032048293&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.1955

DO - 10.1143/jjap.37.1955

M3 - Article

AN - SCOPUS:0032048293

SN - 0021-4922

VL - 37

SP - 1955

EP - 1959

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 SUPPL. A

ER -

Characterization of Pb_1-xLa_xTiO₃ thin films by the radio frequency magnetron sputtering technique

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