Charge and spin-based electronics using ZnO thin films

D. P. Norton; Y. W. Heo; M. Ivill; Y. Li; Y. W. Kwon; J. M. Erie; M. Jones; P. H. Holloway; S. J. Pearton; F. Ren; Z. V. Park; S. Li; A. F. Hebard; J. Kelly

Charge and spin-based electronics using ZnO thin films

D. P. Norton, Y. W. Heo, M. Ivill, Y. Li, Y. W. Kwon, J. M. Erie, M. Jones, P. H. Holloway, S. J. Pearton, F. Ren, Z. V. Park, S. Li, A. F. Hebard, J. Kelly

University of Florida

Research output: Contribution to conference › Paper › peer-review

Abstract

The properties of ZnO films for devices are reviewed, focusing on chemical doping for charge and FET device formation. This includes the behavior of phosphorus as a deep acceptor and polycrystalline FET and pn junction devices. All of these devices are relevant to spin-based devices as well.

Original language	English
Pages	276-286
Number of pages	11
State	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 3 Oct 2004 → 8 Oct 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	3/10/04 → 8/10/04

Cite this

Norton, D. P., Heo, Y. W., Ivill, M., Li, Y., Kwon, Y. W., Erie, J. M., Jones, M., Holloway, P. H., Pearton, S. J., Ren, F., Park, Z. V., Li, S., Hebard, A. F., & Kelly, J. (2004). Charge and spin-based electronics using ZnO thin films. 276-286. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

@conference{22701790769648ada40f0f9179055084,

title = "Charge and spin-based electronics using ZnO thin films",

abstract = "The properties of ZnO films for devices are reviewed, focusing on chemical doping for charge and FET device formation. This includes the behavior of phosphorus as a deep acceptor and polycrystalline FET and pn junction devices. All of these devices are relevant to spin-based devices as well.",

author = "Norton, {D. P.} and Heo, {Y. W.} and M. Ivill and Y. Li and Kwon, {Y. W.} and Erie, {J. M.} and M. Jones and Holloway, {P. H.} and Pearton, {S. J.} and F. Ren and Park, {Z. V.} and S. Li and Hebard, {A. F.} and J. Kelly",

year = "2004",

language = "English",

pages = "276--286",

note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

}

Norton, DP, Heo, YW, Ivill, M, Li, Y, Kwon, YW, Erie, JM, Jones, M, Holloway, PH, Pearton, SJ, Ren, F, Park, ZV, Li, S, Hebard, AF & Kelly, J 2004, 'Charge and spin-based electronics using ZnO thin films', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 3/10/04 - 8/10/04 pp. 276-286.

Charge and spin-based electronics using ZnO thin films. / Norton, D. P.; Heo, Y. W.; Ivill, M. et al.
2004. 276-286 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Charge and spin-based electronics using ZnO thin films

AU - Norton, D. P.

AU - Heo, Y. W.

AU - Ivill, M.

AU - Li, Y.

AU - Kwon, Y. W.

AU - Erie, J. M.

AU - Jones, M.

AU - Holloway, P. H.

AU - Pearton, S. J.

AU - Ren, F.

AU - Park, Z. V.

AU - Li, S.

AU - Hebard, A. F.

AU - Kelly, J.

PY - 2004

Y1 - 2004

N2 - The properties of ZnO films for devices are reviewed, focusing on chemical doping for charge and FET device formation. This includes the behavior of phosphorus as a deep acceptor and polycrystalline FET and pn junction devices. All of these devices are relevant to spin-based devices as well.

AB - The properties of ZnO films for devices are reviewed, focusing on chemical doping for charge and FET device formation. This includes the behavior of phosphorus as a deep acceptor and polycrystalline FET and pn junction devices. All of these devices are relevant to spin-based devices as well.

UR - http://www.scopus.com/inward/record.url?scp=20144389492&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:20144389492

SP - 276

EP - 286

T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

ER -

Charge and spin-based electronics using ZnO thin films

Abstract

Conference

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