Charge and spin functionality in wide bandgap oxides

David P. Norton; Young Woo Heo; Stephen J. Pearton; Arthur Hebard; Nikoleta Theodoropoulou; Lynn A. Boatner; John D. Budai; Y. D. Park; R. G. Wilson

doi:10.1117/12.479612

Charge and spin functionality in wide bandgap oxides

David P. Norton
, Young Woo Heo
, Stephen J. Pearton
, Arthur Hebard
, Nikoleta Theodoropoulou
, Lynn A. Boatner
, John D. Budai
, Y. D. Park
, R. G. Wilson

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.

Original language	English
Pages (from-to)	106-117
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4999
DOIs	https://doi.org/10.1117/12.479612
State	Published - 2003
Event	Quantum Sensing: Evolution and Revolution from Past to Future - San Jose, CA, United States Duration: 27 Jan 2003 → 30 Jan 2003

Keywords

Ferromagnetic semiconductor
Spintronics
ZnO

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10.1117/12.479612

Cite this

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title = "Charge and spin functionality in wide bandgap oxides",

abstract = "In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.",

keywords = "Ferromagnetic semiconductor, Spintronics, ZnO",

author = "Norton, \{David P.\} and Heo, \{Young Woo\} and Pearton, \{Stephen J.\} and Arthur Hebard and Nikoleta Theodoropoulou and Boatner, \{Lynn A.\} and Budai, \{John D.\} and Park, \{Y. D.\} and Wilson, \{R. G.\}",

year = "2003",

doi = "10.1117/12.479612",

language = "English",

volume = "4999",

pages = "106--117",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Quantum Sensing: Evolution and Revolution from Past to Future ; Conference date: 27-01-2003 Through 30-01-2003",

}

TY - JOUR

T1 - Charge and spin functionality in wide bandgap oxides

AU - Norton, David P.

AU - Heo, Young Woo

AU - Pearton, Stephen J.

AU - Hebard, Arthur

AU - Theodoropoulou, Nikoleta

AU - Boatner, Lynn A.

AU - Budai, John D.

AU - Park, Y. D.

AU - Wilson, R. G.

PY - 2003

Y1 - 2003

N2 - In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.

AB - In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.

KW - Ferromagnetic semiconductor

KW - Spintronics

KW - ZnO

UR - https://www.scopus.com/pages/publications/0141857896

U2 - 10.1117/12.479612

DO - 10.1117/12.479612

M3 - Conference article

AN - SCOPUS:0141857896

SN - 0277-786X

VL - 4999

SP - 106

EP - 117

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Sensing: Evolution and Revolution from Past to Future

Y2 - 27 January 2003 through 30 January 2003

ER -

Charge and spin functionality in wide bandgap oxides

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Keywords

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