Charge carrier and spin doping in ZnO thin films

D. P. Norton, M. Ivill, Y. Li, Y. W. Kwon, J. M. Erie, H. S. Kim, K. Ip, S. J. Pearton, Y. W. Heo, S. Kim, B. S. Kang, F. Ren, A. F. Hebard, J. Kelly

Research output: Contribution to journalConference articlepeer-review

43 Scopus citations

Abstract

Recent efforts on doping ZnO films for charge and spin functionality are reviewed, focusing on chemical doping for charge and spin device formation. Discussion includes the behavior of phosphorus as an acceptor and magnetism in transition metal-doped ZnO. Evidence for p-type behavior in phosphorus-doped (Zn,Mg)O grown by pulsed laser deposition is presented. The magnetic properties of ZnO co-doped with Mn and Sn are also discussed.

Original languageEnglish
Pages (from-to)160-168
Number of pages9
JournalThin Solid Films
Volume496
Issue number1
DOIs
StatePublished - 1 Feb 2006
EventProceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) -
Duration: 7 Apr 20058 Apr 2005

Keywords

  • Magnetic properties and measurements
  • Semiconductors
  • Zinc oxide

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