CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network

Min Kyu Park; Ho Nam Yoo; Joon Hwang; Sung Yun Woo; Dongseok Kwon; Young Tak Seo; Jong Ho Lee; Jong Ho Bae

doi:10.1109/TED.2021.3134601

CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network

Min Kyu Park, Ho Nam Yoo, Joon Hwang, Sung Yun Woo, Dongseok Kwon, Young Tak Seo, Jong Ho Lee, Jong Ho Bae

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A gated diode with a charge trap insulator stack (Al2O3/Si3N4/SiO2) is proposed as a synaptic device and its potentiation and depression operations have been demonstrated. Using the band-to-band tunneling current, the gated diode operates with low current (in nanoampere range) and is suitable for low-power hardware-based neural networks. Since the proposed device has merits on simple and compact structure (half of a MOSFET) and compatibility with conventional CMOS technology, integration with CMOS peripheral circuits including neuron circuits and driving IC is possible.

Original language	English
Pages (from-to)	832-837
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	2
DOIs	https://doi.org/10.1109/TED.2021.3134601
State	Published - 1 Feb 2022

Keywords

Band-to-band current
charge trap memory
low power
synaptic device

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10.1109/TED.2021.3134601

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title = "CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network",

abstract = "A gated diode with a charge trap insulator stack (Al2O3/Si3N4/SiO2) is proposed as a synaptic device and its potentiation and depression operations have been demonstrated. Using the band-to-band tunneling current, the gated diode operates with low current (in nanoampere range) and is suitable for low-power hardware-based neural networks. Since the proposed device has merits on simple and compact structure (half of a MOSFET) and compatibility with conventional CMOS technology, integration with CMOS peripheral circuits including neuron circuits and driving IC is possible.",

keywords = "Band-to-band current, charge trap memory, low power, synaptic device",

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AU - Yoo, Ho Nam

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AU - Woo, Sung Yun

AU - Kwon, Dongseok

AU - Seo, Young Tak

AU - Lee, Jong Ho

AU - Bae, Jong Ho

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AB - A gated diode with a charge trap insulator stack (Al2O3/Si3N4/SiO2) is proposed as a synaptic device and its potentiation and depression operations have been demonstrated. Using the band-to-band tunneling current, the gated diode operates with low current (in nanoampere range) and is suitable for low-power hardware-based neural networks. Since the proposed device has merits on simple and compact structure (half of a MOSFET) and compatibility with conventional CMOS technology, integration with CMOS peripheral circuits including neuron circuits and driving IC is possible.

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CMOS-Compatible Low-Power Gated Diode Synaptic Device for Hardware- Based Neural Network

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Keywords

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