Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates

H. S. Lee, H. S. Sohn, J. Y. Lee, K. H. Lee, Y. H. Kim, T. W. Kim, M. S. Kwon, H. L. Park

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt -type and CuAu-I -type ordered structures, together with a spinodal-like phase separation were formed in the Cd xZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.

Original languageEnglish
Article number093512
JournalJournal of Applied Physics
Volume99
Issue number9
DOIs
StatePublished - 1 May 2006

Fingerprint

Dive into the research topics of 'Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates'. Together they form a unique fingerprint.

Cite this