Communication Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications

A back-to-back Schottky diode configuration employing an ultrathin TiO2 layer has been assessed for application as a bi-polar selector in resistive random access memory by considering such factors as its working principle and scaling trends. Although higher rectification was achieved with an extremely low leakage current by the formation of a Schottky barrier, the maximum current remained low. This lower driving current can, however, be improved through engineering the properties of the TiO2 layer. Finally, the device characteristics of a scaled-down to ~30 nm were observed, the results of which strongly suggest that the device characteristics are governed by its whole area.