Communication-effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM

Changhyuck Sung; Jeonghwan Song; Jiyong Woo; Hyunsang Hwangz

doi:10.1149/2.0281707jss

Communication-effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM

Changhyuck Sung, Jeonghwan Song, Jiyong Woo, Hyunsang Hwangz

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage VGSeff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.

Original language	English
Pages (from-to)	P440-P442
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	7
DOIs	https://doi.org/10.1149/2.0281707jss
State	Published - 2017

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title = "Communication-effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM",

abstract = "The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage VGSeff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.",

author = "Changhyuck Sung and Jeonghwan Song and Jiyong Woo and Hyunsang Hwangz",

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AU - Sung, Changhyuck

AU - Song, Jeonghwan

AU - Woo, Jiyong

AU - Hwangz, Hyunsang

PY - 2017

Y1 - 2017

N2 - The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage VGSeff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.

AB - The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage VGSeff is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio.

UR - https://www.scopus.com/pages/publications/85021809294

U2 - 10.1149/2.0281707jss

DO - 10.1149/2.0281707jss

M3 - Article

AN - SCOPUS:85021809294

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IS - 7

ER -

Communication-effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM

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