Compact modeling of silicon nanowire MOSFET for radio frequency applications

Seongjae Cho; Kyung Rok Kim; Byung Gook Park; In Man Kang

doi:10.1002/mop.25686

Compact modeling of silicon nanowire MOSFET for radio frequency applications

Seongjae Cho, Kyung Rok Kim, Byung Gook Park, In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%.

Original language	English
Pages (from-to)	471-473
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	53
Issue number	2
DOIs	https://doi.org/10.1002/mop.25686
State	Published - Feb 2011

Keywords

model
MOSFET
radio frequency
silicon nanowire

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10.1002/mop.25686

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title = "Compact modeling of silicon nanowire MOSFET for radio frequency applications",

abstract = "This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%.",

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author = "Seongjae Cho and Kim, {Kyung Rok} and Park, {Byung Gook} and Kang, {In Man}",

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AU - Cho, Seongjae

AU - Kim, Kyung Rok

AU - Park, Byung Gook

AU - Kang, In Man

PY - 2011/2

Y1 - 2011/2

N2 - This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%.

AB - This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%.

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KW - MOSFET

KW - radio frequency

KW - silicon nanowire

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DO - 10.1002/mop.25686

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EP - 473

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 2

ER -

Compact modeling of silicon nanowire MOSFET for radio frequency applications

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Keywords

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