Comparison between the capacitance and the signal-to-noise ratio of a PIN diode

Dong Ha Kah; Jae Beom Bae; Hyo Jung Hyun; Hwan Bae Park; Hyun Ok Kim

doi:10.3938/jkps.59.27

Comparison between the capacitance and the signal-to-noise ratio of a PIN diode

Dong Ha Kah, Jae Beom Bae, Hyo Jung Hyun, Hwan Bae Park, Hyun Ok Kim

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

PIN diodes with areas of 1 × 1 cm² were fabricated on 5-in., high-resistivity, <100>-orientation, and 380-μm-thick n-type silicon wafers. When a charged particle passes through the PIN diode and a reverse voltage is applied, electron-hole pairs are created and collected into the electrodes by the electric field. The capacitance and the signal-to-noise ratio of the PIN diode were measured as functions of the reverse bias voltage. The reciprocal of the capacitance has the same electrical behavior as the signal-to-noise ratio.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Journal of the Korean Physical Society
Volume	59
Issue number	1
DOIs	https://doi.org/10.3938/jkps.59.27
State	Published - Jul 2011

Keywords

CV measurement
PIN diode
Semiconductor detector
Signal-to-noise ratio

Access to Document

10.3938/jkps.59.27

Cite this

@article{0a0d4cfc10944f22b2b53cc73b9eec7a,

title = "Comparison between the capacitance and the signal-to-noise ratio of a PIN diode",

abstract = "PIN diodes with areas of 1 × 1 cm2 were fabricated on 5-in., high-resistivity, <100>-orientation, and 380-μm-thick n-type silicon wafers. When a charged particle passes through the PIN diode and a reverse voltage is applied, electron-hole pairs are created and collected into the electrodes by the electric field. The capacitance and the signal-to-noise ratio of the PIN diode were measured as functions of the reverse bias voltage. The reciprocal of the capacitance has the same electrical behavior as the signal-to-noise ratio.",

keywords = "CV measurement, PIN diode, Semiconductor detector, Signal-to-noise ratio",

author = "Kah, {Dong Ha} and Bae, {Jae Beom} and Hyun, {Hyo Jung} and Park, {Hwan Bae} and Kim, {Hyun Ok}",

year = "2011",

month = jul,

doi = "10.3938/jkps.59.27",

language = "English",

volume = "59",

pages = "27--29",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Comparison between the capacitance and the signal-to-noise ratio of a PIN diode

AU - Kah, Dong Ha

AU - Bae, Jae Beom

AU - Hyun, Hyo Jung

AU - Park, Hwan Bae

AU - Kim, Hyun Ok

PY - 2011/7

Y1 - 2011/7

N2 - PIN diodes with areas of 1 × 1 cm2 were fabricated on 5-in., high-resistivity, <100>-orientation, and 380-μm-thick n-type silicon wafers. When a charged particle passes through the PIN diode and a reverse voltage is applied, electron-hole pairs are created and collected into the electrodes by the electric field. The capacitance and the signal-to-noise ratio of the PIN diode were measured as functions of the reverse bias voltage. The reciprocal of the capacitance has the same electrical behavior as the signal-to-noise ratio.

AB - PIN diodes with areas of 1 × 1 cm2 were fabricated on 5-in., high-resistivity, <100>-orientation, and 380-μm-thick n-type silicon wafers. When a charged particle passes through the PIN diode and a reverse voltage is applied, electron-hole pairs are created and collected into the electrodes by the electric field. The capacitance and the signal-to-noise ratio of the PIN diode were measured as functions of the reverse bias voltage. The reciprocal of the capacitance has the same electrical behavior as the signal-to-noise ratio.

KW - CV measurement

KW - PIN diode

KW - Semiconductor detector

KW - Signal-to-noise ratio

UR - http://www.scopus.com/inward/record.url?scp=79960573105&partnerID=8YFLogxK

U2 - 10.3938/jkps.59.27

DO - 10.3938/jkps.59.27

M3 - Article

AN - SCOPUS:79960573105

SN - 0374-4884

VL - 59

SP - 27

EP - 29

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Comparison between the capacitance and the signal-to-noise ratio of a PIN diode

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this