Comparison of the interface and border traps of nanolaminate and bilayer structures of Al₂O₃ and HfO₂ on In_0.53Ga_0.47As

This study is a comparison of interface and border traps of nanolaminate and bilayer structures of Al₂O₃ and HfO₂ with those of single layers on an In_0.53Ga_0.47As substrate. The nanolaminate structure shows better trap minimalization in both trap cases along with lower hysteresis and leakage current density and higher breakdown field than the bilayer structures. X-ray photoelectron spectroscopy (XPS) was used to quantify the microstructural properties, and a combination of XPS and reflected electron energy loss spectrum analysis was used to calculate the bandgap of deposited films. Al incorporation into HfO₂ increases the bandgap and band offsets.