Complete Quasi-Static Modeling of 130nm RF MOSFETs

Young Ho Jung, In Man Kang, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A complete quasi-static modeling of RF MOSFETs including extrinsic parameters is proposed. All the parameters were obtained by linear regression and analytical equations without complex curve fitting. The extracted results were verified by using the parameters for MOSFET small signal model. Without any fitting or optimization step, the total modeling error of S-parameter was calculated to be only 1.46% up to 20 GHz.

Original languageEnglish
Title of host publication64th DRC 2006 - Device Research Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-74
Number of pages2
ISBN (Electronic)0780397495, 9780780397491
StatePublished - 2006
Event64th Device Research Conference, DRC 2006 - Parker, United States
Duration: 26 Jun 200628 Jun 2006

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference64th Device Research Conference, DRC 2006
Country/TerritoryUnited States
CityParker
Period26/06/0628/06/06

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