@inproceedings{eb343a0f54e747db9a82f5285ce5a7a3,
title = "Complete Quasi-Static Modeling of 130nm RF MOSFETs",
abstract = "A complete quasi-static modeling of RF MOSFETs including extrinsic parameters is proposed. All the parameters were obtained by linear regression and analytical equations without complex curve fitting. The extracted results were verified by using the parameters for MOSFET small signal model. Without any fitting or optimization step, the total modeling error of S-parameter was calculated to be only 1.46% up to 20 GHz.",
author = "Jung, {Young Ho} and Kang, {In Man} and Hyungcheol Shin",
note = "Publisher Copyright: {\textcopyright} 2006 IEEE.; 64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",
year = "2006",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "73--74",
booktitle = "64th DRC 2006 - Device Research Conference",
address = "United States",
}