Comprehensive Study on the Relation between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Seung Wook Lee; Tewook Bang; Choong Ki Kim; Kyu Man Hwang; Byung Chul Jang; Dong Il Moon; Hagyoul Bae; Myungsoo Seo; Seong Yeon Kim; Do Hyun Kim; Sung Yool Choi; Yang Kyu Choi

doi:10.1109/LED.2017.2718032

Comprehensive Study on the Relation between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Seung Wook Lee, Tewook Bang, Choong Ki Kim, Kyu Man Hwang, Byung Chul Jang, Dong Il Moon, Hagyoul Bae, Myungsoo Seo, Seong Yeon Kim, Do Hyun Kim, Sung Yool Choi, Yang Kyu Choi

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance (R_S) and the drain resistance (R_D). Because of its inherent vertical channel structure, the R_S and R_D are inevitably different. To observe the effects of the asymmetric R_S and R_D on LFN, a forward mode (FM) and reverse mode (RM) of voltage sweep were used. In the RM, the correlated mobility fluctuation effect was higher and the power spectral density of resistance fluctuation (S_RSD) was lower than those in the FM. In addition, S_RSD was correlated with the R_S, but little with the R_D. To suppress S_RSD, it is important to minimize the RS.

Original language	English
Article number	7954656
Pages (from-to)	1008-1011
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/LED.2017.2718032
State	Published - Aug 2017

Keywords

forward mode (FM)
Low-frequency noise (LFN)
power spectral density of resistance fluctuation (SRSD)
reverse mode (RM)
source resistance (RS)
vertical pillar-type FET

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10.1109/LED.2017.2718032

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Lee, S. W., Bang, T., Kim, C. K., Hwang, K. M., Jang, B. C., Moon, D. I., Bae, H., Seo, M., Kim, S. Y., Kim, D. H., Choi, S. Y., & Choi, Y. K. (2017). Comprehensive Study on the Relation between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET. IEEE Electron Device Letters, 38(8), 1008-1011. Article 7954656. https://doi.org/10.1109/LED.2017.2718032

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title = "Comprehensive Study on the Relation between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET",

abstract = "The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance (RS) and the drain resistance (RD). Because of its inherent vertical channel structure, the RS and RD are inevitably different. To observe the effects of the asymmetric RS and RD on LFN, a forward mode (FM) and reverse mode (RM) of voltage sweep were used. In the RM, the correlated mobility fluctuation effect was higher and the power spectral density of resistance fluctuation (SRSD) was lower than those in the FM. In addition, SRSD was correlated with the RS, but little with the RD. To suppress SRSD, it is important to minimize the RS.",

keywords = "forward mode (FM), Low-frequency noise (LFN), power spectral density of resistance fluctuation (SRSD), reverse mode (RM), source resistance (RS), vertical pillar-type FET",

author = "Lee, {Seung Wook} and Tewook Bang and Kim, {Choong Ki} and Hwang, {Kyu Man} and Jang, {Byung Chul} and Moon, {Dong Il} and Hagyoul Bae and Myungsoo Seo and Kim, {Seong Yeon} and Kim, {Do Hyun} and Choi, {Sung Yool} and Choi, {Yang Kyu}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/LED.2017.2718032",

language = "English",

volume = "38",

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AU - Bang, Tewook

AU - Kim, Choong Ki

AU - Hwang, Kyu Man

AU - Jang, Byung Chul

AU - Moon, Dong Il

AU - Bae, Hagyoul

AU - Seo, Myungsoo

AU - Kim, Seong Yeon

AU - Kim, Do Hyun

AU - Choi, Sung Yool

AU - Choi, Yang Kyu

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AB - The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance (RS) and the drain resistance (RD). Because of its inherent vertical channel structure, the RS and RD are inevitably different. To observe the effects of the asymmetric RS and RD on LFN, a forward mode (FM) and reverse mode (RM) of voltage sweep were used. In the RM, the correlated mobility fluctuation effect was higher and the power spectral density of resistance fluctuation (SRSD) was lower than those in the FM. In addition, SRSD was correlated with the RS, but little with the RD. To suppress SRSD, it is important to minimize the RS.

KW - forward mode (FM)

KW - Low-frequency noise (LFN)

KW - power spectral density of resistance fluctuation (SRSD)

KW - reverse mode (RM)

KW - source resistance (RS)

KW - vertical pillar-type FET

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ER -

Comprehensive Study on the Relation between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

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