Abstract
This study utilizes computer-aided design (CAD) to explore its role in optimizing data storage and energy conversion systems. By employing Silvaco TCAD and MATLAB Simulink softwares, simulation models of a silicon oxide nitride oxide silicon (SONOS)-gate stack for non-volatile memory and a pulse width modulation (PWM) rectifier were developed and analyzed. The results show that the application of high-ț materials significantly enhances the storage performance of the charge trap memory (CTM), while the simulation of the PWM rectifier demonstrates its advantages in improving energy conversion efficiency. The findings indicate that CAD tools will continue to play a critical role in the future development of energy conversion and data storage technologies, contributing to the efficient and reliable design of engineering systems.
| Original language | English |
|---|---|
| Title of host publication | International Conference on Applied System Innovation, ICASI 2025 |
| Publisher | Institution of Engineering and Technology |
| Pages | 602-604 |
| Number of pages | 3 |
| Volume | 2025 |
| Edition | 15 |
| ISBN (Electronic) | 9781837242634, 9781837243143, 9781837243150, 9781837243167, 9781837243235, 9781837243341, 9781837243358, 9781837246847, 9781837246854, 9781837247004, 9781837247011, 9781837247028, 9781837247035, 9781837247042, 9781837247271 |
| DOIs | |
| State | Published - 2025 |
| Event | 2025 International Conference on Applied System Innovation, ICASI 2025 - Tokyo, Japan Duration: 22 Apr 2025 → 25 Apr 2025 |
Conference
| Conference | 2025 International Conference on Applied System Innovation, ICASI 2025 |
|---|---|
| Country/Territory | Japan |
| City | Tokyo |
| Period | 22/04/25 → 25/04/25 |
Keywords
- CHARGE TRAP
- DYNAMIC RESPONSE
- HIGH-k DIELECTRICS
- NONVOLATILE MEMORIES
- PULSE-WIDTH MODULATION RECTIFIER
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