Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances

Yun Soo Park; Hwan Gi Lee; Chung Mo Yang; Dong Seok Kim; Jin Hyuk Bae; Seongjae Cho; Jung Hee Lee; In Man Kang

doi:10.1088/0268-1242/28/1/015006

Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances

Yun Soo Park, Hwan Gi Lee, Chung Mo Yang, Dong Seok Kim, Jin Hyuk Bae, Seongjae Cho, Jung Hee Lee, In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.

Original language	English
Article number	015006
Journal	Semiconductor Science and Technology
Volume	28
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/28/1/015006
State	Published - Jan 2013

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abstract = "GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.",

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AU - Park, Yun Soo

AU - Lee, Hwan Gi

AU - Yang, Chung Mo

AU - Kim, Dong Seok

AU - Bae, Jin Hyuk

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2013/1

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N2 - GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.

AB - GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.

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Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances

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