Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

Manabu Ohtomo, Yasushi Yamauchi, Alex A. Kuzubov, Natalya S. Eliseeva, Pavel V. Avramov, Shiro Entani, Yoshihiro Matsumoto, Hiroshi Naramoto, Seiji Sakai

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the π-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.

Original languageEnglish
Article number051604
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - 3 Feb 2014

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