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Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

  • Manabu Ohtomo
  • , Yasushi Yamauchi
  • , Alex A. Kuzubov
  • , Natalya S. Eliseeva
  • , Pavel V. Avramov
  • , Shiro Entani
  • , Yoshihiro Matsumoto
  • , Hiroshi Naramoto
  • , Seiji Sakai
  • Japan Atomic Energy Agency
  • National Institute for Materials Science Tsukuba
  • RAS - Kirensky Institute of Physics, Siberian Branch
  • Siberian Federal University

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the π-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.

Original languageEnglish
Article number051604
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - 3 Feb 2014

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