Contacts to p-type ZnMgO

Suku Kim; B. S. Kang; F. Ren; Y. W. Heo; K. Ip; D. P. Norton; S. J. Pearton

doi:10.1063/1.1669082

Contacts to p-type ZnMgO

Suku Kim, B. S. Kang, F. Ren, Y. W. Heo, K. Ip, D. P. Norton, S. J. Pearton

University of Florida

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Abstract

The Schottky and ohmic contacts to p-type ZnMgO were analyzed. For Ti/Au annealed at 600°C for 30 seconds, the lowest specific contact resistivity of 3×10 ^-3 ωcm ² was obtained. At this annealing temperature, Ni/Au was less thermally stable and showed severe degradation of contact morphology. The results show that both Pt and Ti with Au overlayers show rectifying characteristics on p-ZnMgO, with barrier heights of ∼0.55-0.56 eV.

Original language	English
Pages (from-to)	1904-1906
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1669082
State	Published - 15 Mar 2004

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title = "Contacts to p-type ZnMgO",

abstract = "The Schottky and ohmic contacts to p-type ZnMgO were analyzed. For Ti/Au annealed at 600°C for 30 seconds, the lowest specific contact resistivity of 3×10 -3 ωcm 2 was obtained. At this annealing temperature, Ni/Au was less thermally stable and showed severe degradation of contact morphology. The results show that both Pt and Ti with Au overlayers show rectifying characteristics on p-ZnMgO, with barrier heights of ∼0.55-0.56 eV.",

author = "Suku Kim and Kang, {B. S.} and F. Ren and Heo, {Y. W.} and K. Ip and Norton, {D. P.} and Pearton, {S. J.}",

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T1 - Contacts to p-type ZnMgO

AU - Kim, Suku

AU - Kang, B. S.

AU - Ren, F.

AU - Heo, Y. W.

AU - Ip, K.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The Schottky and ohmic contacts to p-type ZnMgO were analyzed. For Ti/Au annealed at 600°C for 30 seconds, the lowest specific contact resistivity of 3×10 -3 ωcm 2 was obtained. At this annealing temperature, Ni/Au was less thermally stable and showed severe degradation of contact morphology. The results show that both Pt and Ti with Au overlayers show rectifying characteristics on p-ZnMgO, with barrier heights of ∼0.55-0.56 eV.

AB - The Schottky and ohmic contacts to p-type ZnMgO were analyzed. For Ti/Au annealed at 600°C for 30 seconds, the lowest specific contact resistivity of 3×10 -3 ωcm 2 was obtained. At this annealing temperature, Ni/Au was less thermally stable and showed severe degradation of contact morphology. The results show that both Pt and Ti with Au overlayers show rectifying characteristics on p-ZnMgO, with barrier heights of ∼0.55-0.56 eV.

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U2 - 10.1063/1.1669082

DO - 10.1063/1.1669082

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SN - 0003-6951

VL - 84

SP - 1904

EP - 1906

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Contacts to p-type ZnMgO

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