Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD

W. S. Han; O. K. Kwon; H. W. Song; Y. G. Ju; J. H. Kim; S. H. Ko Park; K. H. Lee; S. J. Park; B. S. Yoo

Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD

W. S. Han, O. K. Kwon, H. W. Song, Y. G. Ju, J. H. Kim, S. H. Ko Park, K. H. Lee, S. J. Park, B. S. Yoo

Department of Physics Education

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The metal-organic chemical-vapor deposition (MOCVD)-grown all-monolithic 1.55 μm vertical cavity surface emitting lasers (VCSELs) with tunnel junction using InAlGaAs/InAlAs lattice matched to InP was demonstrated. As such, intra-cavity contact and selectively etched aperture were used. Theshold current, emission wavelength and maximum light output power for an 11 μm diameter device was found to be about 3.6 mA, 1565 nm, and 0.18 mW, respectively.

Original language	English
Pages (from-to)	503-504
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: 26 Oct 2003 → 30 Oct 2003

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@article{1da18cbffc064ee58f29fbcb74a02a2a,

title = "Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD",

abstract = "The metal-organic chemical-vapor deposition (MOCVD)-grown all-monolithic 1.55 μm vertical cavity surface emitting lasers (VCSELs) with tunnel junction using InAlGaAs/InAlAs lattice matched to InP was demonstrated. As such, intra-cavity contact and selectively etched aperture were used. Theshold current, emission wavelength and maximum light output power for an 11 μm diameter device was found to be about 3.6 mA, 1565 nm, and 0.18 mW, respectively.",

author = "Han, {W. S.} and Kwon, {O. K.} and Song, {H. W.} and Ju, {Y. G.} and Kim, {J. H.} and {Ko Park}, {S. H.} and Lee, {K. H.} and Park, {S. J.} and Yoo, {B. S.}",

year = "2003",

language = "English",

volume = "2",

pages = "503--504",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

}

TY - JOUR

T1 - Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD

AU - Han, W. S.

AU - Kwon, O. K.

AU - Song, H. W.

AU - Ju, Y. G.

AU - Kim, J. H.

AU - Ko Park, S. H.

AU - Lee, K. H.

AU - Park, S. J.

AU - Yoo, B. S.

PY - 2003

Y1 - 2003

N2 - The metal-organic chemical-vapor deposition (MOCVD)-grown all-monolithic 1.55 μm vertical cavity surface emitting lasers (VCSELs) with tunnel junction using InAlGaAs/InAlAs lattice matched to InP was demonstrated. As such, intra-cavity contact and selectively etched aperture were used. Theshold current, emission wavelength and maximum light output power for an 11 μm diameter device was found to be about 3.6 mA, 1565 nm, and 0.18 mW, respectively.

AB - The metal-organic chemical-vapor deposition (MOCVD)-grown all-monolithic 1.55 μm vertical cavity surface emitting lasers (VCSELs) with tunnel junction using InAlGaAs/InAlAs lattice matched to InP was demonstrated. As such, intra-cavity contact and selectively etched aperture were used. Theshold current, emission wavelength and maximum light output power for an 11 μm diameter device was found to be about 3.6 mA, 1565 nm, and 0.18 mW, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0344897698&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0344897698

SN - 1092-8081

VL - 2

SP - 503

EP - 504

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD

Abstract

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