Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

H. W. Song; O. K. Kwon; W. S. Han; Y. G. Ju; J. H. Kim; J. H. Shin; B. S. Yoo

Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

H. W. Song, O. K. Kwon, W. S. Han, Y. G. Ju, J. H. Kim, J. H. Shin, B. S. Yoo

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

Original language	English
Pages (from-to)	693-694
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2002
Event	2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002

Cite this

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title = "Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs",

abstract = "We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.",

author = "Song, {H. W.} and Kwon, {O. K.} and Han, {W. S.} and Ju, {Y. G.} and Kim, {J. H.} and Shin, {J. H.} and Yoo, {B. S.}",

year = "2002",

language = "English",

volume = "2",

pages = "693--694",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 10-11-2002 Through 14-11-2002",

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TY - JOUR

T1 - Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

AU - Song, H. W.

AU - Kwon, O. K.

AU - Han, W. S.

AU - Ju, Y. G.

AU - Kim, J. H.

AU - Shin, J. H.

AU - Yoo, B. S.

PY - 2002

Y1 - 2002

N2 - We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

AB - We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0036925667&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036925667

SN - 1092-8081

VL - 2

SP - 693

EP - 694

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 10 November 2002 through 14 November 2002

ER -

Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

Abstract

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