Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

H. W. Song; O. K. Kwon; W. S. Han; Y. G. Ju; J. H. Kim; J. H. Shin; B. S. Yoo

Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

H. W. Song
, O. K. Kwon
, W. S. Han
, Y. G. Ju
, J. H. Kim
, J. H. Shin
, B. S. Yoo

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

Original language	English
Pages (from-to)	693-694
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2002
Event	2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002

Cite this

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title = "Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs",

abstract = "We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.",

author = "Song, \{H. W.\} and Kwon, \{O. K.\} and Han, \{W. S.\} and Ju, \{Y. G.\} and Kim, \{J. H.\} and Shin, \{J. H.\} and Yoo, \{B. S.\}",

year = "2002",

language = "English",

volume = "2",

pages = "693--694",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 10-11-2002 Through 14-11-2002",

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TY - JOUR

T1 - Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

AU - Song, H. W.

AU - Kwon, O. K.

AU - Han, W. S.

AU - Ju, Y. G.

AU - Kim, J. H.

AU - Shin, J. H.

AU - Yoo, B. S.

PY - 2002

Y1 - 2002

N2 - We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

AB - We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.

UR - https://www.scopus.com/pages/publications/0036925667

M3 - Conference article

AN - SCOPUS:0036925667

SN - 1092-8081

VL - 2

SP - 693

EP - 694

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 10 November 2002 through 14 November 2002

ER -

Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

Abstract

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