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Control of Cu conductive filament in complementary atom switch for cross-point selector device application

  • Jiyong Woo
  • , Daeseok Lee
  • , Euijun Cha
  • , Sangheon Lee
  • , Sangsu Park
  • , Hyunsang Hwang

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.

Original languageEnglish
Article number6674044
Pages (from-to)60-62
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
StatePublished - Jan 2014

Keywords

  • access device
  • atom switch
  • cross-point array memory
  • Selector device

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