@inproceedings{1d9f44e6655a4fa2abc7aef3ed8b3b15,
title = "Control of transconductance in high performance AlGaN/GaN FinFETs",
abstract = "AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in TMAH solution. The device with Wfin of 150 nm exhibits normally-on performance with threshold voltage of -2.5 V, suppression of current collapse phenomenon, low gate leakage current (10-11 A), low subthreshold swing (SS) of 68 mV/decade, and high linearity characteristic with extremely broad transconductance (gm). On the other hand, devices with Wfin = 50 and 70 nm exhibit normally-off performance with positive threshold voltage of 3.0 and 1.5 V, respectively, and less broad gm characteristics.",
author = "Jo, {Young Woo} and Son, {Dong Hyeok} and Won, {Chul Ho} and V. Sindhuri and Kim, {Ji Hyun} and Seo, {Jae Hwa} and Kang, {In Man} and Lee, {Jung Hee}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",
year = "2015",
month = aug,
day = "14",
doi = "10.1109/PEDS.2015.7203514",
language = "English",
series = "Proceedings of the International Conference on Power Electronics and Drive Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "684--686",
booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",
address = "United States",
}