TY - GEN
T1 - Controllable Polarization Switching of Hafnia-Based Ferroelectric Bilayers
AU - Jeong, Jiae
AU - Park, Hyoungjin
AU - Woo, Jiyong
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - For neuromorphic applications, achieving a precisely controllable remnant polarization (Pr) as well as coercive voltage (VC) is crucial to achieve a multilevel polarization in the ferroelectric layer (FL). Therefore, we introduce bilayered ferroelectric thin films with Zr-doped HfO2 (HZO) on top of Al-doped HfO2 (HAO), allowing the adjustment of Pr over a broad voltage range relative to the ramping voltage. In the bilayer ferroelectric HZO/HAO, polarization switching behavior occurs sequentially through each FL, which results in tunable Pr characteristics.
AB - For neuromorphic applications, achieving a precisely controllable remnant polarization (Pr) as well as coercive voltage (VC) is crucial to achieve a multilevel polarization in the ferroelectric layer (FL). Therefore, we introduce bilayered ferroelectric thin films with Zr-doped HfO2 (HZO) on top of Al-doped HfO2 (HAO), allowing the adjustment of Pr over a broad voltage range relative to the ramping voltage. In the bilayer ferroelectric HZO/HAO, polarization switching behavior occurs sequentially through each FL, which results in tunable Pr characteristics.
UR - https://www.scopus.com/pages/publications/85203834400
U2 - 10.1109/SNW63608.2024.10639238
DO - 10.1109/SNW63608.2024.10639238
M3 - Conference contribution
AN - SCOPUS:85203834400
T3 - 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024
SP - 93
EP - 94
BT - 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024
Y2 - 15 June 2024 through 16 June 2024
ER -