Cooperative polymer gate dielectrics in organic thin-film transistors

S. Young Park; Mikyung Park; Hong H. Lee

doi:10.1063/1.1794857

Cooperative polymer gate dielectrics in organic thin-film transistors

S. Young Park
, Mikyung Park
, Hong H. Lee

School of Food Science & Biotechnology

Seoul National University

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

A concept in which two polymer dielectrics were made to act as cooperative gate insulators for organic thin-films transistors was presented. Polyvinylphenol was selected as one of the dielectrics due to its high mobility. It was found that a hydrophobic and less polar polymer was less influenced by impurities such as moisture, oxygen, and mobile charges. The results show that increasing dielectric thickness worsens the hysteresis that is bulk related.

Original language	English
Pages (from-to)	2283-2285
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1794857
State	Published - 20 Sep 2004

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10.1063/1.1794857

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title = "Cooperative polymer gate dielectrics in organic thin-film transistors",

abstract = "A concept in which two polymer dielectrics were made to act as cooperative gate insulators for organic thin-films transistors was presented. Polyvinylphenol was selected as one of the dielectrics due to its high mobility. It was found that a hydrophobic and less polar polymer was less influenced by impurities such as moisture, oxygen, and mobile charges. The results show that increasing dielectric thickness worsens the hysteresis that is bulk related.",

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N2 - A concept in which two polymer dielectrics were made to act as cooperative gate insulators for organic thin-films transistors was presented. Polyvinylphenol was selected as one of the dielectrics due to its high mobility. It was found that a hydrophobic and less polar polymer was less influenced by impurities such as moisture, oxygen, and mobile charges. The results show that increasing dielectric thickness worsens the hysteresis that is bulk related.

AB - A concept in which two polymer dielectrics were made to act as cooperative gate insulators for organic thin-films transistors was presented. Polyvinylphenol was selected as one of the dielectrics due to its high mobility. It was found that a hydrophobic and less polar polymer was less influenced by impurities such as moisture, oxygen, and mobile charges. The results show that increasing dielectric thickness worsens the hysteresis that is bulk related.

UR - https://www.scopus.com/pages/publications/7044231181

U2 - 10.1063/1.1794857

DO - 10.1063/1.1794857

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VL - 85

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

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Cooperative polymer gate dielectrics in organic thin-film transistors

Abstract

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