Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee; Dae Hwan Kim; Doo Yong Lee; Sungkyun Park; Sangsig Kim; Hyuck In Kwon; Sang Yeol Lee

doi:10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee
, Dae Hwan Kim
, Doo Yong Lee
, Sungkyun Park
, Sangsig Kim
, Hyuck In Kwon
, Sang Yeol Lee

Korea University
Chung-Ang University
Pusan National University
Gachon University

Research output: Contribution to journal › Comment/debate

Abstract

Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

Original language	English
Pages (from-to)	383
Number of pages	1
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	3
DOIs	https://doi.org/10.1007/s42341-021-00323-2
State	Published - Jun 2021

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Lee, B. H., Kim, D. H., Lee, D. Y., Park, S., Kim, S., Kwon, H. I., & Lee, S. Y. (2021). Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials, 22(3), 383. https://doi.org/10.1007/s42341-021-00323-2

Lee, Byeong Hyeon ; Kim, Dae Hwan ; Lee, Doo Yong et al. / Correction to : Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). In: Transactions on Electrical and Electronic Materials. 2021 ; Vol. 22, No. 3. pp. 383.

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title = "Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)",

abstract = "Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.",

author = "Lee, \{Byeong Hyeon\} and Kim, \{Dae Hwan\} and Lee, \{Doo Yong\} and Sungkyun Park and Sangsig Kim and Kwon, \{Hyuck In\} and Lee, \{Sang Yeol\}",

note = "Publisher Copyright: {\textcopyright} 2021, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2021",

month = jun,

doi = "10.1007/s42341-021-00323-2",

language = "English",

volume = "22",

pages = "383",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "3",

}

Lee, BH, Kim, DH, Lee, DY, Park, S, Kim, S, Kwon, HI & Lee, SY 2021, 'Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)', Transactions on Electrical and Electronic Materials, vol. 22, no. 3, pp. 383. https://doi.org/10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). / Lee, Byeong Hyeon; Kim, Dae Hwan; Lee, Doo Yong et al.
In: Transactions on Electrical and Electronic Materials, Vol. 22, No. 3, 06.2021, p. 383.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Correction to

T2 - Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

AU - Lee, Byeong Hyeon

AU - Kim, Dae Hwan

AU - Lee, Doo Yong

AU - Park, Sungkyun

AU - Kim, Sangsig

AU - Kwon, Hyuck In

AU - Lee, Sang Yeol

PY - 2021/6

Y1 - 2021/6

N2 - Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

AB - Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

UR - https://www.scopus.com/pages/publications/85104666368

U2 - 10.1007/s42341-021-00323-2

DO - 10.1007/s42341-021-00323-2

M3 - Comment/debate

AN - SCOPUS:85104666368

SN - 1229-7607

VL - 22

SP - 383

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 3

ER -

Lee BH, Kim DH, Lee DY, Park S, Kim S, Kwon HI et al. Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials. 2021 Jun;22(3):383. doi: 10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

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