Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0)

Seung Heon Shin; Dong Seok Kim; Jong Chang Woo; Heon Bok Lee; Sung Ho Hahm; Do Kywn Kim

doi:10.1007/s42341-024-00567-8

Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0)

Seung Heon Shin, Dong Seok Kim, Jong Chang Woo, Heon Bok Lee, Sung Ho Hahm, Do Kywn Kim

Research output: Contribution to journal › Comment/debate

Abstract

In the Acknowledgements section of this article, the grant number NRF-2021M3C1C3097674, relating to the National R&D Program through the National Research Foundation of Korea (NRF) has been removed, and the missing grant information relating to the Korea Evaluation Institute of Industrial Technology (KEIT) has been added. The Acknowledgements section should have read. Acknowledgements This research was supported by National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF-2022M3I8A1078437 and NRF-2009-0082580) and Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (No. RS-2022-00143570, Research on epitaxial growth and device core technology for 2 kV vertical GaN power devices). The EDA tool was supported by the IC Design Education Center (IDEC), Korea. Both Seung Heon Shin and Dong-Seok Kim contributed equally to this work.

Original language	English
Pages (from-to)	860
Number of pages	1
Journal	Transactions on Electrical and Electronic Materials
Volume	25
Issue number	6
DOIs	https://doi.org/10.1007/s42341-024-00567-8
State	Published - Dec 2024

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Shin, S. H., Kim, D. S., Woo, J. C., Lee, H. B., Hahm, S. H., & Kim, D. K. (2024). Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0). Transactions on Electrical and Electronic Materials, 25(6), 860. https://doi.org/10.1007/s42341-024-00567-8

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title = "Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0)",

abstract = "In the Acknowledgements section of this article, the grant number NRF-2021M3C1C3097674, relating to the National R&D Program through the National Research Foundation of Korea (NRF) has been removed, and the missing grant information relating to the Korea Evaluation Institute of Industrial Technology (KEIT) has been added. The Acknowledgements section should have read. Acknowledgements This research was supported by National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF-2022M3I8A1078437 and NRF-2009-0082580) and Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (No. RS-2022-00143570, Research on epitaxial growth and device core technology for 2 kV vertical GaN power devices). The EDA tool was supported by the IC Design Education Center (IDEC), Korea. Both Seung Heon Shin and Dong-Seok Kim contributed equally to this work.",

author = "Shin, {Seung Heon} and Kim, {Dong Seok} and Woo, {Jong Chang} and Lee, {Heon Bok} and Hahm, {Sung Ho} and Kim, {Do Kywn}",

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month = dec,

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Shin, SH, Kim, DS, Woo, JC, Lee, HB, Hahm, SH & Kim, DK 2024, 'Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0)', Transactions on Electrical and Electronic Materials, vol. 25, no. 6, pp. 860. https://doi.org/10.1007/s42341-024-00567-8

Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0). / Shin, Seung Heon; Kim, Dong Seok; Woo, Jong Chang et al.
In: Transactions on Electrical and Electronic Materials, Vol. 25, No. 6, 12.2024, p. 860.

Research output: Contribution to journal › Comment/debate

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AU - Kim, Dong Seok

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N2 - In the Acknowledgements section of this article, the grant number NRF-2021M3C1C3097674, relating to the National R&D Program through the National Research Foundation of Korea (NRF) has been removed, and the missing grant information relating to the Korea Evaluation Institute of Industrial Technology (KEIT) has been added. The Acknowledgements section should have read. Acknowledgements This research was supported by National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF-2022M3I8A1078437 and NRF-2009-0082580) and Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (No. RS-2022-00143570, Research on epitaxial growth and device core technology for 2 kV vertical GaN power devices). The EDA tool was supported by the IC Design Education Center (IDEC), Korea. Both Seung Heon Shin and Dong-Seok Kim contributed equally to this work.

AB - In the Acknowledgements section of this article, the grant number NRF-2021M3C1C3097674, relating to the National R&D Program through the National Research Foundation of Korea (NRF) has been removed, and the missing grant information relating to the Korea Evaluation Institute of Industrial Technology (KEIT) has been added. The Acknowledgements section should have read. Acknowledgements This research was supported by National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF-2022M3I8A1078437 and NRF-2009-0082580) and Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government (MOTIE) (No. RS-2022-00143570, Research on epitaxial growth and device core technology for 2 kV vertical GaN power devices). The EDA tool was supported by the IC Design Education Center (IDEC), Korea. Both Seung Heon Shin and Dong-Seok Kim contributed equally to this work.

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JO - Transactions on Electrical and Electronic Materials

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ER -

Correction to: Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors (Transactions on Electrical and Electronic Materials, (2024), 25, 4, (512-518), 10.1007/s42341-024-00553-0)

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