TY - JOUR
T1 - Correlation between the chemical-state and the electrical-property variations in ITO films
AU - Kim, Ji Woong
AU - Lee, Dooyong
AU - Park, Sungkyun
AU - Bae, Jong Seong
N1 - Publisher Copyright:
� 2016, Korean Physical Society. All rights reserved.
PY - 2016/9/1
Y1 - 2016/9/1
N2 - The post-annealing environment (O2, in-Air, N2, Ar, and vacuum)-dependent variations in the electrical and the optical properties of Sn-doped In2O3 (ITO) films were examined. X-ray diffraction measurements showed that the as-grown films exhibited amorphous characteristics. After post-annealing, all films showed polycrystallinity, regardless of the annealing environment. In the optical transmittance data, as-grown films showed transmittances of above 80%. After post-annealing, the transmittance of the film increased slightly. Furthermore, that increase was enhanced for environments with less oxygen. Interestingly, the carrier concentration was also increased in environments with less oxygen. X-ray photoelectron spectroscopy revealed that the increase (decrease) in Sn4+ (oxygen vacancy) was related to variations in the carrier concentration.
AB - The post-annealing environment (O2, in-Air, N2, Ar, and vacuum)-dependent variations in the electrical and the optical properties of Sn-doped In2O3 (ITO) films were examined. X-ray diffraction measurements showed that the as-grown films exhibited amorphous characteristics. After post-annealing, all films showed polycrystallinity, regardless of the annealing environment. In the optical transmittance data, as-grown films showed transmittances of above 80%. After post-annealing, the transmittance of the film increased slightly. Furthermore, that increase was enhanced for environments with less oxygen. Interestingly, the carrier concentration was also increased in environments with less oxygen. X-ray photoelectron spectroscopy revealed that the increase (decrease) in Sn4+ (oxygen vacancy) was related to variations in the carrier concentration.
KW - Defects
KW - ITO
KW - Post-annealing environments
UR - http://www.scopus.com/inward/record.url?scp=84992388889&partnerID=8YFLogxK
U2 - 10.3938/NPSM.66.1082
DO - 10.3938/NPSM.66.1082
M3 - Article
AN - SCOPUS:84992388889
SN - 0374-4914
VL - 66
SP - 1082
EP - 1087
JO - New Physics: Sae Mulli
JF - New Physics: Sae Mulli
IS - 9
ER -