Correlation between the chemical-state and the electrical-property variations in ITO films

Ji Woong Kim, Dooyong Lee, Sungkyun Park, Jong Seong Bae

Research output: Contribution to journalArticlepeer-review

Abstract

The post-annealing environment (O2, in-Air, N2, Ar, and vacuum)-dependent variations in the electrical and the optical properties of Sn-doped In2O3 (ITO) films were examined. X-ray diffraction measurements showed that the as-grown films exhibited amorphous characteristics. After post-annealing, all films showed polycrystallinity, regardless of the annealing environment. In the optical transmittance data, as-grown films showed transmittances of above 80%. After post-annealing, the transmittance of the film increased slightly. Furthermore, that increase was enhanced for environments with less oxygen. Interestingly, the carrier concentration was also increased in environments with less oxygen. X-ray photoelectron spectroscopy revealed that the increase (decrease) in Sn4+ (oxygen vacancy) was related to variations in the carrier concentration.

Original languageEnglish
Pages (from-to)1082-1087
Number of pages6
JournalNew Physics: Sae Mulli
Volume66
Issue number9
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Defects
  • ITO
  • Post-annealing environments

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