Abstract
The electrical conductivity (σ), photoconductivity and photocatalytic reactivity in doped crystalline TiO2 were measured as a function of the oxygen partial pressure (Po2), temperature, doping type and UV irradiation. The Po2 dependence of σ suggests that the predominant atomic defects in pure TiO2 are oxygen vacancies (Vo-) and interstitial titanium ions (Tii-), but the dominant defect is changed with Po2 and temperature. The photoexcited electrons in reduced and/or n-type doped TiO2 enhance both the photoconductivity and the photocatalytic reactivity by the reduction process. Therefore, these behaviors are strongly dependent on the electron concentration.
Original language | English |
---|---|
Pages (from-to) | 873-878 |
Number of pages | 6 |
Journal | Korean Journal of Chemical Engineering |
Volume | 18 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2001 |
Keywords
- Charge Compensation
- Defect Type
- Doping Effect
- Photoconductivity
- Photoreactivity