Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing

Jaeyong Jeong, Seong Kwang Kim, Yoon Je Suh, Jisung Lee, Joonyoung Choi, Juhyuk Park, Joon Pyo Kim, Bong Ho Kim, Younjung Jo, Seung Young Park, Jongmin Kim, Sanghyeon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Cryogenic RF transistors and routing circuits operating with extremely low power are essential as control/readout electronics for future large-scale quantum computing (QC) systems. In this work, we demonstrate 3D stackable InGaAs HEMT-based cryogenic RF transistors and routing circuits integrated with Nb superconductors for ultra-low power operation. As a result, we achieve a record high unity current gain cutoff frequency (fT) of 601 GHz and unity power gain cutoff frequency (fMAX) of 593 GHz at 4 K with the smallest power dissipation among ever reported cryogenic RF transistors. Furthermore, using a novel structure with Nb superconductor and III-V heterostructure hybrid interconnect of the routing circuits, we achieve high-performance routing circuits with 41% lower power dissipation compared to the conventional structure.

Original languageEnglish
Title of host publication2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863488069
DOIs
StatePublished - 2023
Event2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
Duration: 11 Jun 202316 Jun 2023

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2023-June
ISSN (Print)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2316/06/23

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