Abstract
Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.
Original language | English |
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Pages (from-to) | 62-66 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 292 |
Issue number | 1 |
DOIs | |
State | Published - 15 Jun 2006 |
Keywords
- A1. Crystal structure
- A3. Molecular beam epitaxy
- B2. Magnetic materials