CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

J. H. Shin; B. S. Yoo; W. S. Han; O. K. Kwon; Y. G. Ju; J. H. Lee

doi:10.1109/LPT.2002.1021959

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

J. H. Shin, B. S. Yoo, W. S. Han, O. K. Kwon, Y. G. Ju, J. H. Lee

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In_0.4Al_0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

Original language	English
Pages (from-to)	1031-1033
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2002.1021959
State	Published - Aug 2002

Keywords

Aluminum compounds
CVD
CW lasers
Epitaxial growth
Indium compounds
Optical fiber communication
Semiconductor lasers
Surface-emitting laser

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10.1109/LPT.2002.1021959

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@article{02576e02bac54f43a57f8a8259f3ef09,

title = "CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD",

abstract = "We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.",

keywords = "Aluminum compounds, CVD, CW lasers, Epitaxial growth, Indium compounds, Optical fiber communication, Semiconductor lasers, Surface-emitting laser",

author = "Shin, {J. H.} and Yoo, {B. S.} and Han, {W. S.} and Kwon, {O. K.} and Ju, {Y. G.} and Lee, {J. H.}",

year = "2002",

month = aug,

doi = "10.1109/LPT.2002.1021959",

language = "English",

volume = "14",

pages = "1031--1033",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

AU - Shin, J. H.

AU - Yoo, B. S.

AU - Han, W. S.

AU - Kwon, O. K.

AU - Ju, Y. G.

AU - Lee, J. H.

PY - 2002/8

Y1 - 2002/8

N2 - We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

AB - We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

KW - Aluminum compounds

KW - CVD

KW - CW lasers

KW - Epitaxial growth

KW - Indium compounds

KW - Optical fiber communication

KW - Semiconductor lasers

KW - Surface-emitting laser

UR - http://www.scopus.com/inward/record.url?scp=0036685921&partnerID=8YFLogxK

U2 - 10.1109/LPT.2002.1021959

DO - 10.1109/LPT.2002.1021959

M3 - Article

AN - SCOPUS:0036685921

SN - 1041-1135

VL - 14

SP - 1031

EP - 1033

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

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Keywords

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