CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

J. H. Shin; B. S. Yoo; W. S. Han; O. K. Kwon; Y. G. Ju; J. H. Lee

doi:10.1109/LPT.2002.1021959

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

J. H. Shin
, B. S. Yoo
, W. S. Han
, O. K. Kwon
, Y. G. Ju
, J. H. Lee

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In_0.4Al_0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

Original language	English
Pages (from-to)	1031-1033
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2002.1021959
State	Published - Aug 2002

Keywords

Aluminum compounds
CVD
CW lasers
Epitaxial growth
Indium compounds
Optical fiber communication
Semiconductor lasers
Surface-emitting laser

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10.1109/LPT.2002.1021959

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title = "CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD",

abstract = "We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4\%, respectively.",

keywords = "Aluminum compounds, CVD, CW lasers, Epitaxial growth, Indium compounds, Optical fiber communication, Semiconductor lasers, Surface-emitting laser",

author = "Shin, \{J. H.\} and Yoo, \{B. S.\} and Han, \{W. S.\} and Kwon, \{O. K.\} and Ju, \{Y. G.\} and Lee, \{J. H.\}",

year = "2002",

month = aug,

doi = "10.1109/LPT.2002.1021959",

language = "English",

volume = "14",

pages = "1031--1033",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

AU - Shin, J. H.

AU - Yoo, B. S.

AU - Han, W. S.

AU - Kwon, O. K.

AU - Ju, Y. G.

AU - Lee, J. H.

PY - 2002/8

Y1 - 2002/8

N2 - We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

AB - We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.

KW - Aluminum compounds

KW - CVD

KW - CW lasers

KW - Epitaxial growth

KW - Indium compounds

KW - Optical fiber communication

KW - Semiconductor lasers

KW - Surface-emitting laser

UR - https://www.scopus.com/pages/publications/0036685921

U2 - 10.1109/LPT.2002.1021959

DO - 10.1109/LPT.2002.1021959

M3 - Article

AN - SCOPUS:0036685921

SN - 1041-1135

VL - 14

SP - 1031

EP - 1033

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

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Keywords

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